A criterion for the determination of upper critical fields in highly disordered thin-film superconductors

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Abstract
A procedure is described by which the temperature-dependent upper critical field Hc2(T) in highly disordered thin-film superconductors with broad resistive transitions is determined. Resistance versus perpendicular magnetic field isotherms are used in conjunction with the mean field transition temperature Tc 0, derived from Aslamazov–Larkin fits to the zero-field resistive transition, to determine Hc2(T). The sensitivity of the slope parameter (dHc2/dT)‖Tc 0 with respect to the details of the procedure is discussed and the conditions under which meaningful comparisons with theory can be made are elaborated.