Broadband GaAs FET 2 × 1 Switches

1 October 1984

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 081-084
https://doi.org/10.1109/gaas.1984.10401286

Abstract

Two monolithic broadband single pole double throw switches employing both series and shunt zero biased GaAs FETs are presented. One switch operates in the 0-20 GHz frequency band with apprxoimately 2 dB insertion loss and 30 dB isolation. The second switch operates from 6-18 GHz with matched input conditions for all combinations of port selection. Both switches have very low DC power dissipation, fast switching speeds and good large signal performance.

Keywords

SWITCHES
FIELD EFFECT TRANSISTORS
LOGIC GATES
INSERTION LOSS
GALLIUM ARSENIDE
RADIO FREQUENCY
RESISTANCE

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