Polarization switching in semiconductor lasers driven via injection from an external radiation
- 12 January 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (2) , 57-59
- https://doi.org/10.1063/1.97871
Abstract
Switching between transverse electric (TE) and transverse magnetic (TM) polarization states in the output from a semiconductor laser is experimentally obtained through injection locking from an external TM polarized radiation. Switching, which is connected to the loss reduction of the TM modes caused by the injection-locking mechanism, is faster than a few nanoseconds, the resolution limit of our apparatus.Keywords
This publication has 5 references indexed in Scilit:
- Frequency and intensity noise in injection-locked semiconductor lasers: Theory and experimentsIEEE Journal of Quantum Electronics, 1986
- Locking range and stability of injection locked 1.54 µm InGaAsp semiconductor lasersIEEE Journal of Quantum Electronics, 1985
- Compensation of internal thermal stresses in InGaAsP/InP lasers for polarization stabilizationIEEE Journal of Quantum Electronics, 1985
- Direct polarization switching in semiconductor lasersApplied Physics Letters, 1984
- Observation of bistable behavior in the polarization of a laserOptics Letters, 1982