Self-aligned thin film structures with 1000 Å resolution
- 15 January 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (2) , 141-143
- https://doi.org/10.1063/1.91407
Abstract
A two‐level e‐beam resist process is described which is capable of producing features under 1000 Å in size. The process is compatible with oblique evaporation technique so that high‐accuracy alignment can be obtained in multiple‐layer device structures. Tunnel junction structures with areas as small as 10−10 cm2 have been fabricated. The estimated capacitance for such junctions is −15 F. Such structures have application in low‐capacitance Josephson logic circuits. The process is also applicable to fabrication of submicron MOM diodes and other devices which can be made using a lift‐off technique.Keywords
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