Local Mode Broadening by Impurity‐Impurity Interactions

Abstract
Concentration and temperature dependences of the bandwidth of the Raman and infrared active local mode for H in BaF2 have been determined. The bandwidth is observed experimentally to vary as the square root of the impurity concentration, and as T1.5 at high temperatures. This concentration dependence is in qualitative accord with the theoretical predictions of Dawber and Elliott.

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