A theoretical model of a photoelectrochemical solar cell

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Abstract
A Schottky barrier theoretical model for explaining the J‐V characteristic of a photoelectrochemical solar cell (PESC) has been developed considering the effect of dark current, space‐charge recombination, surface states, and detailed charge transfer kinetics at the interface. Both isoenergetic charge transfer and inelastic charge transfers (via surface states) at the interface have been considered and their relative importance are discussed. The theory has been applied to explain the (a) J‐V characteristic for n‐GaAs/Se2−, Se2−2 junction and (b) Fermi‐level pinning observed in GaAs PESC. The inelastic charge transfer via surfaces states has been shown to play an important role in deciding these characteristics.