Double injection and negative resistance in stripe-geometry oxide-aperture AlyGa1−yAs–GaAs–InxGa1−xAs quantum well heterostructure laser diodes

4 November 1996

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 69 (19) , 2882-2884
https://doi.org/10.1063/1.117350

Abstract

Data are presented demonstrating double injection and negative resistance in stripe‐geometry oxide‐aperture Al_yGa_1−yAs–GaAs–In_xGa_1−xAs quantum well heterostructure lasers. The buried oxide laser structures are defined, in current and cavity, by laterally oxidizing the higher Al composition upper and lower cladding layers from a mesa edge (a ridge), thus, forming a narrow oxide‐defined buried aperture (∼2μm). Post fabrication annealing (425 °C in N₂) removes the negative resistance, indicating that the crystal growth and oxidation processes introduce products such as H and OH in the active region that compensate the dopants.

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