Modulation of a semicondutor-to-semimetal transition at 7 THz via coherent lattice vibrations

19 April 1993

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 62 (16) , 1901-1903
https://doi.org/10.1063/1.109537

Abstract

This letter introduces the general notion of significantly modulating the physical characteristics of a solid on a terahertz time scale with coherent lattice vibrations. We show, as an example, experiments in which coherent phonons are optically excited in single‐crystal Ti₂O₃, which is a narrow‐gap semiconductor at 300 K and gradually transforms into a semimetal at 600 K. Quantitative comparison of previous equilibrium measurements to our new transient measurements suggests that the induced coherent lattice vibration is significantly modulating the semiconductor‐to‐semimetal transition at 7 THz.

Keywords

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