Strained InGaAsP multiquantum wells for optical electroabsorption waveguide modulators

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Abstract
The quantum-confined Stark effect in strained InGaAsP multiquantum wells with InGaAsP barriers and its application to the optical electroabsorption waveguide modulator are described. A large spectral red shift of more than 450Å is observed at a low applied voltage of 3V. An extinction ratio of >14dB is demonstrated with a driving voltage as low as 5V.