Crossover from mesoscopic to classical proximity effects, induced by particle - hole symmetry breaking in Andreev interferometers
- 1 January 1996
- journal article
- letter
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 8 (4) , L45-L50
- https://doi.org/10.1088/0953-8984/8/4/001
Abstract
When two superconducting contacts are made on either side of a mesoscopic normal wire, the electrical conductance is a periodic function of the phase difference between the superconductors. For this structure, the oscillation at zero voltage and zero temperature is a small mesoscopic effect, with an amplitude of order . In contrast, we predict that a finite bias voltage V will induce giant oscillations associated with the classical proximity effect. These are a finite fraction of the overall conductance, exhibit a maximum when eV equals the Thouless energy, and decrease at higher voltages. This effect may account for the large-amplitude oscillations measured in recent experiments by Petrashov et al.Keywords
This publication has 31 references indexed in Scilit:
- Elastic scattering and the current-voltage characteristics of superconducting Nb-InAs-Nb junctionsApplied Physics Letters, 1993
- Andreev reflection at superconducting contacts to GaAs/AlGaAs heterostructuresApplied Physics Letters, 1993
- Excess voltage and resistance in superconductor-semiconductor junctionsPhysical Review B, 1993
- Carrier transport in mesoscopic silicon-coupled superconducting junctionsPhysical Review B, 1993
- Transport properties in an InAs-inserted-channel As/As heterostructure coupled superconducting junctionPhysical Review B, 1992
- Anomalous Andreev conductance in InAs-AlSb quantum well structures with Nb electrodesPhysical Review Letters, 1992
- Nonequilibrium carrier transport in superconducting niobium-silicon heterostructuresPhysical Review B, 1992
- Observation of quantum confinement by strain gradientsPhysical Review Letters, 1991
- InAs-AlSb quantum well as superconducting weak link with high critical current densityApplied Physics Letters, 1990
- Three Terminal Josephson Junction with a Semiconductor Accumulation LayerJapanese Journal of Applied Physics, 1987