Photoluminescence spectroscopy of localized excitons in Si1−xGex

This publication has 34 references indexed in Scilit:

• Photoluminescence characterization of SimGen superlattices
  Journal of Vacuum Science & Technology B, 1990
• Near-band-gap photoluminescence of Si-Ge alloys
  Physical Review B, 1989
• Intrinsic exciton states in indirect-band-gap ${\mathrm{GaAs}}_{\mathrm{x}}$${\mathrm{P}}_{1\mathrm{-}\mathrm{x}}$: Composition dependence and effects of impurities
  Physical Review B, 1989
• Defect Induced Luminescence from MBE Prepared Si/Si_1-xGe_x Superlattices
  MRS Proceedings, 1989
• Electronic properties of the (100) (Si)/(Ge) strained-layer superlattices
  Physical Review B, 1988
• Photoluminescence study of localization effects induced by the fluctuating random alloy potential in indirect band-gap ${\mathrm{GaAs}}_{1\mathrm{-}\mathrm{x}}$${\mathrm{P}}_{\mathrm{x}}$
  Physical Review B, 1985
• Dynamics of intrinsic and nitrogen-induced exciton emission in indirect-gapGa1−xAlxAs
  Physical Review B, 1983
• Localized Excitons in CdS_1−xSe_x Solid Solutions
  Physica Status Solidi (b), 1982
• Photoluminescence of Si-rich Si-Ge alloys
  Physical Review B, 1982
• Fluorescence line narrowing, localized exciton states, and spectral diffusion in the mixed semiconductorCdSxSe1−x
  Physical Review B, 1982