An investigation on the cutoff characteristics of sub-quarter-micron SOI MOSFET
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 152-153
- https://doi.org/10.1109/soi.1991.162902
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Thin-film SOI CMOS transistors with p/sup +/-polysilicon gatesIEEE Transactions on Electron Devices, 1991
- Novel technique for Si epitaxial lateral overgrowth: Tunnel epitaxyApplied Physics Letters, 1989