Developments in modern high power semiconductor devices
- 30 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Double gate MOS device having IGBT and MCT performancesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Dual gate MOS thyristor (DGMOT)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Numerical analysis of switching in the IGBT triggered thyristorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002