Effect of Electric Field and Current Injection on the Main Electron Trap in Bulk GaAs
- 1 January 1980
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Effect of electric field on deep-level transients in GaAs and GaPApplied Physics Letters, 1980
- Electron and hole capture cross-sections at deep centers in gallium arsenideRevue de Physique Appliquée, 1979
- Strongly anisotropic field ionization of a common deep level in GaAsJournal de Physique Lettres, 1979
- Multiphonon, non-radiative transition rate for electrons in semiconductors and insulatorsJournal of Physics C: Solid State Physics, 1978
- Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctionsJournal of Applied Physics, 1974