Extremely high electron mobilities in modulation-doped GaAs-Al x Ga 1− x As heterojunction superlattices
- 8 January 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (1) , 36-37
- https://doi.org/10.1049/el:19810027
Abstract
GaAs-AlxGa1−xAs modulation doped multilayer structures with 77 K electron mobilities up to 80 300 cm2V−1s−1 at a carrier concentration of 6×1016 cm−3 have been grown by molecular beam epitaxy. Such high mobilities should make the performance of GaAs integrated logic circuits at liquid nitrogen temperature comparable to that of superconducting Josephson junctions.Keywords
This publication has 0 references indexed in Scilit: