Preparation of GaAs[sub x]P[sub 1−x] by Vapor Phase Reaction
Open Access
- 1 January 1964
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 111 (7) , 814-817
- https://doi.org/10.1149/1.2426259
Abstract
A method for producing epitaxial utilizing an open tube flowing atmosphere system is presented. The various alloy compositions are synthesized and deposited by using , , H2, and Ga as the initial reactants. The complete range of compositions has been prepared by varying the mole ratio and introduced into the reactor gas stream. Experimental conditions required for achieving good epitaxial growth of these materials on 〈111〉 oriented substrates are discussed.Keywords
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