Room temperature deposited indium zinc oxide thin film transistors

Depletion-mode indium zinc oxide (IZO) channel thin film transistors were fabricated on glass substrates from layers deposited at room temperature using rf magnetron sputtering. The threshold voltage was in the range from $-5.5\text{to}-6.5\mathrm{V}$ depending on gate dielectric $\left(\mathrm{Si}{\mathrm{O}}_2\right)$ thickness and the drain current on-to-off ratio was $\sim {10}^5$ . The maximum field effect mobility in the channel was $\sim 4.5{\mathrm{cm}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$ , lower than the Hall mobility of $\sim 17{\mathrm{cm}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$ in the same layers, suggesting a strong influence of scattering due to trapped charges at the $\mathrm{Si}{\mathrm{O}}_2\text{-}\mathrm{IZO}$ interface. The low deposition and processing temperatures make these devices suitable for applications requiring flexible substrates.