Surface electronic structure of InAs(110)

The electronic structure of the InAs(110) cleavage surface has been studied by angle-resolved photoelectron spectroscopy. The bulk band structure has been calculated utilizing the augmented plane-wave method and then the bulk bands have been projected along the lines Γ¯-X¯ and Γ¯-Y¯ of the surface Brillouin zone (SBZ). Three surface-related structures have been found and their initial state versus ${\mathit{k}}_{\mathrm{?}}$ dispersion along the line Γ¯-X¯ and the line Γ¯-Y¯ of the SBZ has been determined. The structures are identified as ${\mathit{A}}_5$, ${\mathit{A}}_4$, and ${\mathit{A}}_3$ along Γ¯-X¯ and as ${\mathit{A}}_5$, ${\mathit{A}}_4$, and ${\mathit{C}}_2$ along Γ¯-Y¯.