Density increase in the Si(111) surface region created by Ar ion bombardment
- 14 December 1970
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 33 (7) , 455-456
- https://doi.org/10.1016/0375-9601(70)90605-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATIONApplied Physics Letters, 1969
- Energieverluste von 50 keV-Elektronen an Ge und SiThe European Physical Journal A, 1966
- STUDY OF THE EARLY STAGES OF THE EPITAXY OF SILICON ON SILICONApplied Physics Letters, 1966
- Study of Ion-Bombardment Damage on a Ge (111) Surface by Low-Energy Electron DiffractionJournal of Applied Physics, 1965
- Structures of Clean Surfaces of Germanium and Silicon. IJournal of Applied Physics, 1963