Raman scattering by interface-phonon polaritons in a GaAs/AlAs heterostructure

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Abstract
We report the first Raman study of interface-phonon polaritons in an air/GaAs(60 nm)/AlAs(500 nm)/GaAs(substrate) system grown by molecular-beam epitaxy. Two interface-phonon polariton modes in the frequency region of the AlAs optical phonon, originating from the two (upper and lower) interfaces of GaAs/AlAs, were observed in a quasibackscattering configuration and in a nonresonance condition. The dispersion relations were obtained by changing the angle of the incident light. The experimental results agree well with the theoretical dispersion relation obtained from Maxwell's equations.