The design of high-voltage high-power silicon junction rectifiers

1 September 1970

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 17 (9) , 657-660
https://doi.org/10.1109/t-ed.1970.17053

Abstract

A set of curves is presented. These curves can be easily used to obtain the tradeoff relations between the reverse and the forward voltages of high-voltage p-i-n rectifiers. By using the lifetime as a parameter, those curves can also be used to achieve compromises between the forward voltage and the recovery time.

Keywords

HIGH VOLTAGE
HIGH POWER
RECOVERY TIME
POWER SILICON
JUNCTION RECTIFIERS
SILICON JUNCTION
TRADEOFF RELATIONS
ACHIEVE COMPROMISES