Properties of “Stoichiometric" Silicon Oxynitride Films

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Abstract
The properties of amorphous SiOxNy films prepared by rf glow discharge of a SiH4–O2–NH3 mixture at 300° C are investigated as functions of the O content, x, and the N content, y. A relationship of 2x + 2.8y = 4 was found between x and y. This result suggests that the densities of homobonds, such as Si–Si, O–O and N–N, and of Si–H and O–H bonds are sufficiently lower than those of Si–O and Si–N bonds. The absence of splitting of stretching absorption bands arising from Si–O and Si–N bonds suggests that the film is a homogeneous alloy. The properties of the dangling bonds and their origins are discussed.

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