Steady state current - voltage characteristics of 4H - SiC thyristors at high and superhigh current densities
- 1 November 1997
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 12 (11) , 1498-1499
- https://doi.org/10.1088/0268-1242/12/11/029
Abstract
Current - voltage characteristics of 4H - SiC thyristors with a blocking voltage of 400 V have been measured up to a current density in the temperature range 300 - 600 K. The voltage drop across the thyristors was found to be significantly less than the drop across 6H - SiC thyristors with a blocking voltage of 100 V reported earlier. At a current density the contact resistance gives the main contribution to the voltage drop in 4H - SiC thyristors.Keywords
This publication has 2 references indexed in Scilit:
- A high-current and high-temperature 6H-SiC thyristorIEEE Electron Device Letters, 1996
- Plasma spread in high-power thyristors under dynamic and static conditionsIEEE Transactions on Electron Devices, 1970