Use of sapphire liners to eliminate edge growth in LPE (Al, Ga)As
- 30 November 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 55 (2) , 325-329
- https://doi.org/10.1016/0022-0248(81)90030-0
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Two-Dimensional Computer Analysis of Liquid Phase EpitaxyJapanese Journal of Applied Physics, 1979
- Integrated GaAs-AlxGa1-xAs double-heterostructure laser with independently controlled optical output divergenceIEEE Journal of Quantum Electronics, 1975
- Growth of AlGaAs-GaAs heterostructures from step-cooled solutionsJournal of Crystal Growth, 1975
- GaAs–AlxGa1−xAs heterostructure laser with separate optical and carrier confinementJournal of Applied Physics, 1974
- Thermal convection in horizontal crystal growthJournal of Crystal Growth, 1968