InP–SiO 2 m.i.s. structure with reduced interface state density near conduction band
- 2 February 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (3) , 51-52
- https://doi.org/10.1049/el:19780037
Abstract
HCl addition to the SiO2 c.v.d. process was found to be an efficient method for producing n–InP m.i.s. structures with low density of interface states near conduction band. Remaining deep interface donor states approximately 0.5 eV below conduction band restrict the steady-state bias range in h.f. applications.Keywords
This publication has 0 references indexed in Scilit: