Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure30Silicon/Natural Silicon Heterostructures
- 15 June 2003
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 42 (Part 1, No) , 3304-3310
- https://doi.org/10.1143/jjap.42.3304
Abstract
Silicon self-diffusion coefficients were measured in intrinsic and extrinsic silicon from 870 to 1070°C using isotopically pure 30Si/natural Si heterostructures. 30Si diffusion profiles are determined by secondary ion mass spectrometry. The temperature dependence of intrinsic diffusion coefficient in bulk Si is obtained. Comparing it in heavily As- or B-doped Si, it is found that the fractional contribution of Si self-diffusion varies with diffusion temperatures and that different type of point defect (self-interstitial or vacancy) is supersaturated by the Fermi level effect in As- or B-doped silicon.Keywords
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