Relating computer simulation studies with interface state measurements on MIS solar cells

1 November 1979

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 26 (11) , 1777-1782
https://doi.org/10.1109/t-ed.1979.19685

Abstract

A lock-in-amplifier technique has been used to measure interface state density (NSS) values ranging from 2 × 1011-3 × 1013states/cm2. eV depending on energy in the gap, type of Si substrate, and choice of Schottky metal used in MIS diodes. Polycrystalline, ribbon, and

Keywords

SOLAR
DIODES
SUBSTRATE
MIS
LOCK
NSS
RIBBON
SCHOTTKY
1013STATES/CM2