C/V measurements of m.i.s. structures on n -InSb formed by room temperature reactive deposition of Si ₃ N ₄

14 August 1980

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 16 (17) , 677-678
https://doi.org/10.1049/el:19800480

Abstract

C/V measurements were performed on Si₃N₄ layers on n-InSb substrates, which had been grown in an r.f. glow discharge at room temperature. Surface state densities on B-type (111) substrates were substantially larger than on A-type substrates. These structures could be biased to accumulation, to depletion, and even to inversion.

Keywords

C/V MEASUREMENT
DEPLETION
REACTIVE DEPOSITION
INSB SUBSTRATES
RF GLOW DISCHARGE
ACCUMULATION
SI3N4 LAYERS
INVERSION
III-V SEMICONDUCTOR
SURFACE STATE DENSITY

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C/V measurements of m.i.s. structures on n -InSb formed by room temperature reactive deposition of Si 3 N 4

Abstract

Keywords

C/V measurements of m.i.s. structures on n -InSb formed by room temperature reactive deposition of Si ₃ N ₄