Scanning tunneling microscopy investigations of polysilicon films under solution
- 1 March 1991
- journal article
- research article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 9 (2) , 955-959
- https://doi.org/10.1116/1.585502
Abstract
We have investigated the surface morphology of polysilicon films, prepared by low pressure chemical vapor deposition, with scanning tunnel microscope (STM) under very dilute HF solution. Imaging under HF solution eliminates ambiguities in the STM topographs caused by the presence of oxide. The average grain sizes determined from STM topographs were consistent with transmission electron microscopy and scanning electron microscopy studies. The root mean square surface roughness measured from STM topographs was found to increase with the polysilicon film thickness while the sheet resistance was found to decrease with the film thickness. The surface topography of the film was found to have a fractal structure with a surface fractal dimension of 2.35.This publication has 1 reference indexed in Scilit:
- Fractals in nature: From characterization to simulationPublished by Springer Nature ,1988