Band structure and instability of Ge1−xSnx alloys
- 31 March 1989
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 69 (12) , 1123-1126
- https://doi.org/10.1016/0038-1098(89)91046-6
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Structural and electronic properties of epitaxial thin-layersuperlatticesPhysical Review B, 1988
- Theory of optical transitions in Si/Ge(001) strained-layer superlatticesPhysical Review B, 1987
- Structurally induced optical transitions in Ge-Si superlatticesPhysical Review Letters, 1987
- Stability of Ordered Bulk and Epitaxial Semiconductor AlloysPhysical Review Letters, 1986
- Synthesis of metastable, semiconducting Ge-Sn alloys by pulsed UV laser crystallizationApplied Physics Letters, 1983
- Pseudopotentials that work: From H to PuPhysical Review B, 1982
- The growth of metastable, heteroepitaxial films of α-Sn by metal beam epitaxyJournal of Crystal Growth, 1981
- Ground State of the Electron Gas by a Stochastic MethodPhysical Review Letters, 1980
- Structural and optical properties of amorphous GexSn1-x alloysSolid State Communications, 1972
- Band Structure of Gray TinPhysical Review Letters, 1963