Submicrometer CMOS devices in zone-melting-recrystallized SOI films

1 July 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (7) , 443-445
https://doi.org/10.1109/EDL.1986.26430

Abstract

CMOS devices with effective channel lengths ranging from 0.7 to 4.0 µm have been fabricated in zone-melting-recrystallized (ZMR) silicon-on-insulator (SOI) films prepared by the graphite-strip-heater technique. Low-temperature processing was utilized to minimize dopant diffusion along subboundaries in the films. Both n- and p-channel devices have low leakage current (<0.1-pA/µm channel width) and good subthreshold characteristics. For ring oscillators with a transistor channel length of 0.8 µm, the propagation delay is 95 ps at a supply voltage of 5 V.

Keywords

SEMICONDUCTOR FILMS
SILICON ON INSULATOR TECHNOLOGY
LEAKAGE CURRENT
RING OSCILLATORS
DEGRADATION
CMOS PROCESS
PROPAGATION DELAY
VOLTAGE-CONTROLLED OSCILLATORS
VERY LARGE SCALE INTEGRATION
CMOS TECHNOLOGY