Collective electron interaction in double-barrier GaAs transistors
- 30 April 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (3-4) , 345-347
- https://doi.org/10.1016/0038-1101(88)90292-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Hot-Electron Spectroscopy of GaAsPhysical Review Letters, 1985
- Importance of electron scattering with coupled plasmon-optical phonon modes in GaAs planar-doped barrier transistorsIEEE Electron Device Letters, 1983
- Electron scattering interaction with coupled plasmon-polar-phonon modes in degenerate semiconductorsPhysical Review B, 1978
- One-Dimensional Plasma Model at Thermodynamic EquilibriumPhysics of Fluids, 1962