Synchrotron-based impurity mapping
- 1 March 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 210 (1-3) , 395-400
- https://doi.org/10.1016/s0022-0248(99)00718-6
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Direct correlation of transition metal impurities and minority carrier recombination in multicrystalline siliconApplied Physics Letters, 1998
- Gettering of iron by oxygen precipitatesApplied Physics Letters, 1998
- Influences of Cu and Fe Impurities on Oxygen Precipitation in Czochralski-Grown SiliconJapanese Journal of Applied Physics, 1996
- Investigation of the recombination activity of misfit dislocations in Si/SiGe epilayers by cathodoluminescence imaging and the electron beam induced current techniqueApplied Physics Letters, 1993
- Localization of the electrical activity of structural defects in polycrystalline siliconJournal of Applied Physics, 1990
- X-ray microprobe using multilayer mirrorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1988
- Catastrophic breakdown in silicon oxides: The effect of Fe impurities at the SiO2-Si interfaceJournal of Applied Physics, 1987
- Transition metals in siliconApplied Physics A, 1983
- Second phase dissolutionMetallurgical Transactions, 1971