Quarternary giant magnetoresistance random access memory
- 15 April 1996
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (8) , 6639-6641
- https://doi.org/10.1063/1.361909
Abstract
We designed a quarternary memory using weakly coupled giant magnetoresistance (GMR) multilayers based on the fact that there are four stable states when the applied field is zero. Compared with conventional binary memory, the major advantage of the quarternary GMR memory is that we can simply double its capacity. This design’s feasibility has been proved by experiments.This publication has 4 references indexed in Scilit:
- Magnetic field sensors using GMR multilayerIEEE Transactions on Magnetics, 1994
- GMR materials for low field applicationsIEEE Transactions on Magnetics, 1993
- Spin-valve magnetoresistance of uncoupled Fe-Cu-Co sandwichesJournal of Applied Physics, 1991
- Large Magnetoresistance of Field-Induced Giant Ferrimagnetic MultilayersJournal of the Physics Society Japan, 1990