An In_0.52Al_0.48As/n⁺-In_0.53Ga_0.47As MISFET with a heavily doped channel

• 1 November 1987
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
• Vol. 8  (11) , 534-536
• https://doi.org/10.1109/edl.1987.26719

Abstract

Keywords

• HIGH FREQUENCY
• THRESHOLD VOLTAGE
• FIELD EFFECT TRANSISTOR
• MOLECULAR BEAM EPITAXY
• GALLIUM ARSENIDE
• LATTICES
• ELECTRON MOBILITY