Formation of Single-Crystal Al Interconnection by In Situ Annealing
- 1 June 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (6S) , 3094-3098
- https://doi.org/10.1143/jjap.32.3094
Abstract
A new process for forming Al interconnections on amorphous insulators such as SiO2 is proposed in this paper. Al thin films were found to agglomerate at temperatures below the melting point and to fill the grooves on a SiO2 layer by in situ annealing in which native oxide is only minimally formed on the Al surface. In sufficiently deep grooves, single-crystal Al interconnections were successfully formed without used of Al dry etching. It has been clearly confirmed by acceleration testing that single-crystal Al interconnections formed by means of the present process have excellent endurance against electromigration compared with conventional poly-crystal interconnections.Keywords
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