Photoluminescence of Donor Doped GaAs Diffused with Copper
- 1 December 1971
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 10 (12)
- https://doi.org/10.1143/jjap.10.1737
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Photoluminescence Study of the Interface between GaAs Epitaxial Layer and its SubstrateJapanese Journal of Applied Physics, 1970
- Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor CenterPhysical Review B, 1968
- Defect Centers in GaAs Produced by Cu DiffusionJournal of Applied Physics, 1967
- A photoluminescence study of acceptor centres in gallium arsenideBritish Journal of Applied Physics, 1967
- Photoluminescence of Cu-Doped Gallium ArsenideJournal of Applied Physics, 1966