INTERACTION BETWEEN DISLOCATIONS AND IMPURITIES IN SILICON

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Abstract
Some aspects on the interaction between dislocations and impurities in silicon crystals are reviewed on the basis of the works of author's group. Topics taken up are effects of impurities on the dynamic behaviour of dislocations, locking of dislocations by impurities, kinetics of the aggregation of oxygen atoms on dislocation core, and the structure and electrical activity of oxygen aggregates developed at dislocation core

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