High pressure synthesis of semiconducting Be-doped polycrystalline cubic boron nitride and its electrical properties

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Abstract
Be‐doped cubic boron nitride (c‐BN) powders, prepared at 5 GPa and 1700 °C by using Li3BN2 as a catalyst, were sintered at 7.7 GPa and 2100 °C without the addition of any sintering aids. The polycrystals so obtained were p‐type semiconductors as determined by the electric and thermoelectric methods. Nonlinear current‐voltage characteristics, showing similar behavior to that of varistors, were observed by a four‐probe method. The activation energy of the resistivity in the ohmic region at temperatures from 25 to 700 °C was about 0.3 eV.