A 90 nm communication technology featuring SiGe HBT transistors, RF CMOS, precision R-L-C RF elements and 1 μm/sup 2/ 6-T SRAM cell

26 June 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 73-76
https://doi.org/10.1109/iedm.2002.1175782

Abstract

This paper presents a highly-manufacturable process technology featuring SiGe HBT devices fully integrated into a 90 nm leading-edge high performance CMOS technology. The technology was developed on a 300 mm wafer platform, and supports process elements including RF CMOS devices, a MIM capacitor, precision resistors, high-Q inductors and varactors.

Keywords

RADIO FREQUENCY
COMMUNICATIONS TECHNOLOGY
SILICON GERMANIUM
GERMANIUM SILICON ALLOYS
HETEROJUNCTION BIPOLAR TRANSISTORS
CMOS TECHNOLOGY
CMOS PROCESS
MIM CAPACITORS
RESISTORS
INDUCTORS

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