Growth Characteristics of Alpha-Silicon Carbide
- 1 January 1971
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 118 (2) , 335-338
- https://doi.org/10.1149/1.2408041
Abstract
Single‐crystal layers of α‐(hexagonal) silicon carbide were successfully deposited on the [0001] and surfaces of substrates from silane and propane in a hydrogen atmosphere and in the 1500°–1650°C temperature range. Above 1650°C the amount of deposited was found to be significantly decreased because of increased hydrogen etch rates and diffusion‐limited reactant transfer to the substrate. The growth characteristics are best described by a model in which the surface of the sample is in equilibrium with the reactants diffusing through a boundary layer. Undoped n‐type deposits (grown on p‐type substrates) exhibited a resistivity of 0.40 ohm‐cm and a Hall mobility of approximately 200 cm2/V‐sec at 77°C.Keywords
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