Correlation between impact ionisation, recombination and visible light emission in GaAs MESFETs

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Abstract
It is shown that the dominant emission mechanism of photons with high energy (hv > Eg) in GaAs MESFETs is the recombination of channel electrons with holes generated by impact ionisation. Accordingly, the intensity of emitted visible light is proportional to the product of the electron and hole currents and therefore to recombination rate.