Recent models of Schottky barrier formation

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Abstract
Two recent models of Schottky barrier formation are discussed. These invoke ‘‘metal-induced gap states’’ or native defects to explain Fermi-level pinning. Available experimental data can be satisfactorily explained by states intrinsic to the surface and interface, without postulating a defect pinning mechanism. In contrast, recent theoretical and experimental work appears to contradict the proposed defect mechanism. The connection between Schottky barriers and semiconductor heterojunction band lineups is proposed as a possible test of theory.

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