Si-SiO[sub 2] Fast Interface State Measurements

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Abstract
The low‐temperature (77°K) MOS‐C (V) curves previously utilized to measure the number of fast interface states are analyzed. Quantitative variations in the number of fast states with variations in crystal orientation, oxidation atmosphere, vacuum and hydrogen annealing, together with some results of MOS‐FET vacuum annealing are presented. For instance, high‐temperature vacuum annealing of oxidized silicon wafers is shown to be capable of producing a very high density of donor and acceptor type fast interface state levels of the type previously identified by measuring MOS‐C (V) flatband voltage at low temperatures. These results suggest that these bands of donor and acceptor levels arise from a single type of defect which is electrically amphoteric.

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