Thin films of layered-structure (1−x)SrBi2Ta2O9−xBi3Ti(Ta1−yNby)O9 solid solution for ferroelectric random access memory devices

This publication has 11 references indexed in Scilit:

• Properties of SrBi2Ta2O9 ferroelectric thin films prepared by a modified metalorganic solution deposition technique
  Applied Physics Letters, 1997
• Formation and properties of SrBi2Ta2O9 thin films
  Physica Status Solidi (a), 1996
• New Low Temperature Processing of Sol-Gel SrBi₂Ta₂O₉ Thin Films
  Japanese Journal of Applied Physics, 1996
• Formation of SrBi₂Ta₂O₉: Part I. Synthesis and characterization of a novel “sol-gel” solution for production of ferroelectric SrBi₂Ta₂O₉ thin films
  Journal of Materials Research, 1996
• Analysis of the Dependence of Ferroelectric Properties of Strontium Bismuth Tantalate (SBT) Thin Films on the Composition and Process Temperature
  Japanese Journal of Applied Physics, 1996
• Structure and Device Characteristics of SrBi₂Ta₂O₉-Based Nonvolatile Random-Access Memories
  MRS Bulletin, 1996
• Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin films
  Applied Physics Letters, 1996
• c-Axis oriented ferroelectric SrBi2(TaxNb2−x)O9 thin films
  Materials Science and Engineering: B, 1995
• Fatigue-free ferroelectric capacitors with platinum electrodes
  Nature, 1995
• A family of ferroelectric bismuth compounds
  Journal of Physics and Chemistry of Solids, 1962