Strain-sensing cryogenic field-effect transistor for integrated strain detection in GaAs/AlGaAs microelectromechanical systems
- 24 June 1996
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (26) , 3763-3765
- https://doi.org/10.1063/1.115999
Abstract
We have fabricated a strain‐sensing cryogenic field‐effect transistor (FET) from a GaAs/AlGaAs heterostructure containing a near‐surface two‐dimensional electron gas. The FET has transconductance 100 μS and a small signal drain‐source resistance 10 MΩ. The charge noise has a flat spectrum at high frequencies with magnitude 0.2e/√Hz and 1/f noise corner less than 300 Hz. The piezoelectric effect couples stress in the substrate to the electron density in the FET channel giving an electrical response to applied strain. Strain sensitivity was measured to be 2×10−9/√Hz, limited by FET noise. Integrated strain‐sensing FETs offer advantages for detecting small forces in GaAs/AlGaAs microelectromechanical systems.Keywords
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