Determination of the mass-anisotropy exciton splitting in silicon
- 30 November 1977
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 24 (7) , 451-455
- https://doi.org/10.1016/0038-1098(77)90285-x
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- The splitting of the 1s excitons in siliconSolid State Communications, 1977
- Theory of indirect excitons in semiconductorsPhysical Review B, 1977
- Direct observation of the ground state splitting of the indirect free exciton in siliconSolid State Communications, 1976
- Temperature dependence of the relative integrated intensities of symmetry-allowed phonon-assisted exciton emission in Si and GePhysical Review B, 1976
- Mass Reversal Effect in the Split Indirect Exciton of GePhysical Review Letters, 1975
- Analysis of derivative spectrum of indirect exciton absorption in siliconSolid State Communications, 1973
- Effects of Uniaxial Stress on the Indirect Exciton Spectrum of SiliconPhysical Review B, 1971
- Energy Levels of Indirect Excitons in Semiconductors with Degenerate BandsPhysical Review B, 1971
- Valley-Orbit Splitting of Free Excitons? The Absorption Edge of SiPhysical Review Letters, 1970