Temperature sensitivity of compound diode-transistor structure

1 July 1967

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 55 (7) , 1233-1234
https://doi.org/10.1109/PROC.1967.5812

Abstract

This letter considers the significant device parameters making a current-gain monolithic circuit, using a matched pair of silicon transistors. Equations are derived which relate the current gain to the device characteristics, the parameter matching, and thermal matching.

Keywords

TEMPERATURE SENSORS
SEMICONDUCTOR DIODES
ETCHING
CIRCUITS
EQUATIONS
POWER DISSIPATION
SEMICONDUCTOR MATERIALS
DIFFUSION PROCESSES
SILICON
VOLTAGE

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