Excitation wavelength and intensity dependence of luminescence decay in a-Si(H)
- 31 October 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 36 (3) , 199-203
- https://doi.org/10.1016/0038-1098(80)90260-4
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Fatigue effect in luminescence of glow discharge amorphous silicon at low temperaturesSolid State Communications, 1980
- Time resolved photoluminescence near the “band gap” in amorphous siliconSolid State Communications, 1979
- The effect of gap state density on the photoconductivity and photoluminescence of a-Si:HSolid State Communications, 1979
- Fast radiationless recombination in amorphous siliconPhysica Status Solidi (b), 1979
- Radiative and non-radiative tunnelling in glow-discharge and sputtered amorphous siliconPhilosophical Magazine Part B, 1979
- Recombination in plasma-deposited amorphous Si:H. Luminescence decayPhysical Review B, 1979
- Photoluminescence and lifetime studies on plasma discharge a-SiJournal of Non-Crystalline Solids, 1979
- Luminescence studies of plasma-deposited hydrogenated siliconPhysical Review B, 1978
- Photoluminescence in amorphous siliconPhysica Status Solidi (b), 1977
- Electroluminescence in amorphous siliconApplied Physics Letters, 1976