Effects of Annealing on ZnS:Tb, F Electroluminescent Thin Films Prepared by rf Magnetron Sputtering
- 1 May 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (5A) , L558
- https://doi.org/10.1143/jjap.26.l558
Abstract
The effects of annealing on sputtered ZnS:Tb, F thin films is investigated by electron probe microanalysis, secondary ion mass spectroscopy and X-ray photoelectron spectroscopy. It is shown that the annealing decreases the F/Tb atomic ratio from 4 to 1, due to the release of F atoms. It is concluded that many of the F ions not contributing to the formation of luminescent centers with Tb ions exist in as-sputtered film and that efficient Tb-F complex centers are formed by annealing at over 400°C. Luminance is enhanced by increasing the Tb-F complex centers and decreasing the hot-electron scattering centers of the F ions.Keywords
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